D. Dieci, R. Menozzi, T. Tomasi, G. Sozzi, C. Lanzieri, C. Canali
{"title":"Breakdown and degradation issues and the choice of a safe load line for power HFET operation","authors":"D. Dieci, R. Menozzi, T. Tomasi, G. Sozzi, C. Lanzieri, C. Canali","doi":"10.1109/RELPHY.2000.843924","DOIUrl":null,"url":null,"abstract":"This work shows data of hot electron degradation of power AlGaAs/GaAs HFETs and uses them to infer general indications on the bias point dependence of the device degradation, the meaningfulness of the breakdown voltage figure of merit and the physical phenomena taking place in the devices during the stress.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"68 1","pages":"258-263"},"PeriodicalIF":0.0000,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2000.843924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
This work shows data of hot electron degradation of power AlGaAs/GaAs HFETs and uses them to infer general indications on the bias point dependence of the device degradation, the meaningfulness of the breakdown voltage figure of merit and the physical phenomena taking place in the devices during the stress.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
