{"title":"Experimental demonstration of temperature stability of Si-tunnel FET over Si-MOSFET","authors":"S. Migita, K. Fukuda, Y. Morita, H. Ota","doi":"10.1109/SNW.2012.6243315","DOIUrl":null,"url":null,"abstract":"Temperature dependences of tunnel field-effect transistor (TFET) and MOSFET were experimentally compared on the same SOI wafer. Validity of the TFET result was corroborated by simulation. It is demonstrated that VTH shift and off-current increment of Si-TFET with temperature were smaller in comparison with Si-MOSFET. Temperature stability of TFET is promising for ultra-low power VLSI.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
Temperature dependences of tunnel field-effect transistor (TFET) and MOSFET were experimentally compared on the same SOI wafer. Validity of the TFET result was corroborated by simulation. It is demonstrated that VTH shift and off-current increment of Si-TFET with temperature were smaller in comparison with Si-MOSFET. Temperature stability of TFET is promising for ultra-low power VLSI.
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