M. Kane, L. Goodman, A. Firester, P. C. van der Wilt, A. Limanov, J. Im
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引用次数: 6
Abstract
We have fabricated CMOS circuits using sequential laterally solidified silicon TFTs on plastic substrates. NMOS devices have unity-gain frequencies greater than 250 MHz, and CMOS ring oscillators operate at 100 MHz. To our knowledge these are the highest performance transistors and the fastest circuits ever fabricated directly on plastic
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