{"title":"CMOS Compatible Ferroelectric Devices for Beyond 1X nm Technology Nodes","authors":"S. Müller","doi":"10.7567/SSDM.2017.K-5-01","DOIUrl":null,"url":null,"abstract":"10 years have passed since ferroelectricity in hafnium oxide was discovered for the first time. This fundamental breakthrough has initiated significant R&D activities in both industry and in academia. This paper summarizes the potential of ferroelectric HfO2 (FE-HfO2) for memory applications with particular focus on highly scaled CMOS technology nodes. It illustrates that FE-HfO2 might finally enable the entrance of ferroelectric memories into mass markets.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"052 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Japan Society of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/SSDM.2017.K-5-01","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
10 years have passed since ferroelectricity in hafnium oxide was discovered for the first time. This fundamental breakthrough has initiated significant R&D activities in both industry and in academia. This paper summarizes the potential of ferroelectric HfO2 (FE-HfO2) for memory applications with particular focus on highly scaled CMOS technology nodes. It illustrates that FE-HfO2 might finally enable the entrance of ferroelectric memories into mass markets.
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