Wideband High Efficiency 50 W GaN-HEMT Balanced Power Amplifier

Q. H. Le, G. Zimmer
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引用次数: 3

Abstract

This paper presents a wideband high efficiency GaN-HEMT balanced power amplifier for modern communication systems. Source- and load-pull analyses through simulations as well as pre-matching technique are applied to design the branch amplifiers. The matching networks comprise the 4:1 binomial impedance transformers to step down the $\mathbf{50}\ \Omega$ system impedance. Broadband SMD quadrature hybrid couplers are implemented to form the balanced configuration. The realized amplifier exhibits small-signal gain of $\mathbf{13.5}\pm \mathbf{2\ dB}$ over the target frequency range 1.3-3.6 GHz while maintaining well-matched conditions at both input and output. Large-signal measurements show that the amplifier properly deliver $\mathbf{47.5}\pm \mathbf{1.2\ dBm}$ continuous wave output power with an average power-added efficiency (PAE) of 55 % across the desired bandwidth.
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宽带高效50w GaN-HEMT平衡功率放大器
提出了一种适用于现代通信系统的宽带高效GaN-HEMT平衡功率放大器。通过仿真分析源和负载-拉分析以及采用预匹配技术设计支路放大器。匹配网络包括4:1二项阻抗变压器,以降低$\mathbf{50}\ \Omega$系统阻抗。采用宽带SMD正交混合耦合器形成平衡结构。所实现的放大器在目标频率范围1.3-3.6 GHz内具有$\mathbf{13.5}\pm \mathbf{2\ dB}$的小信号增益,同时在输入和输出均保持良好的匹配条件。大信号测量表明,该放大器可在所需带宽范围内提供$\mathbf{47.5}\pm \mathbf{1.2\ dBm}$连续波输出功率,平均功率附加效率(PAE)为55%。
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