J. Campbell, K. Cheung, S. Drozdov, R. Southwick, J. Ryan, A. Oates, J. Suehle
{"title":"Channel length-dependent series resistance?","authors":"J. Campbell, K. Cheung, S. Drozdov, R. Southwick, J. Ryan, A. Oates, J. Suehle","doi":"10.1109/SNW.2012.6243299","DOIUrl":null,"url":null,"abstract":"A recently developed series resistance (R<sub>SD</sub>) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent R<sub>SD</sub> which is observed across a wide range of channel lengths and across many different technologies (SiO<sub>2</sub>, SiON, and high-k) (see Figs. 1a-f). This observation obviously raises some concerning issues and implications as R<sub>SD</sub> is universally accepted as channel length-independent. However, careful examination of the R<sub>SD</sub> extraction procedure as well as comparison between R<sub>SD</sub>-corrected field effect mobility (u<sub>FE</sub>) and geometric magnetoresistance mobility (u<sub>MR</sub>) suggests that this unexpected observation may be valid.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243299","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range of channel lengths and across many different technologies (SiO2, SiON, and high-k) (see Figs. 1a-f). This observation obviously raises some concerning issues and implications as RSD is universally accepted as channel length-independent. However, careful examination of the RSD extraction procedure as well as comparison between RSD-corrected field effect mobility (uFE) and geometric magnetoresistance mobility (uMR) suggests that this unexpected observation may be valid.
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