R. Gusmeroli, A. Spinelli, C. Monzio Compagnoni, D. Ielmini, F. Morelli, A. Lacaita
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引用次数: 2
Abstract
We performed 3D Monte Carlo simulations of SOI NAND nanocrystal memories investigating the scaling constraints due to both program failure and reliability concerns. We show that the NC density should be optimized as a trade-off between number fluctuation and SILC immunity and that proper optimization is needed in order to meet the 45 nm ITRS node requirements
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