A. Fujiwara, G. Yamahata, K. Nishiguchi, G. Lansbergen, Y. Ono
{"title":"Silicon single-electron transfer devices: Ultimate control of electric charge","authors":"A. Fujiwara, G. Yamahata, K. Nishiguchi, G. Lansbergen, Y. Ono","doi":"10.1109/SNW.2012.6243336","DOIUrl":null,"url":null,"abstract":"In this paper we describe our recent efforts to develop SE transfer devices based on Si nanotechnology.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":"1 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243336","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper we describe our recent efforts to develop SE transfer devices based on Si nanotechnology.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
