D. Moraru, Y. Kuzuya, E. Hamid, T. Mizuno, M. Tabe, H. Mizuta
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Abstract
We analyzed by ab initio atomistic simulations the energy spectrum of individual donors in Si nanostructures and found significantly enhanced ionization energy (~ 1 eV). By correlating these findings to experimental measurements of doped nanoscale SOI-FETs, design rules can be clarified for tunneling operation of single-dopant devices towards room temperature.
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