Recombination mechanisms at window/emitter interface in InP and other III-V semiconductor based solar cells

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.520562

J. Lammasniemi, K. Tappura, K. Smekalin

{"title":"Recombination mechanisms at window/emitter interface in InP and other III-V semiconductor based solar cells","authors":"J. Lammasniemi, K. Tappura, K. Smekalin","doi":"10.1109/WCPEC.1994.520562","DOIUrl":null,"url":null,"abstract":"The effect of various window layers for InP solar cells are studied. Window materials that have type I and type II alignments in the window/emitter interface are compared. All window materials that form a type II alignment with InP, such as Al/sub 0.20/In/sub 0.80/P, Ga/sub 0.20/In/sub 0.80/P, Al/sub 0.55/In/sub 0.45/As and Al/sub 0.60/In/sub 0.40/P, cause a high interface recombination velocity, which deteriorates the carrier collection. This recombination takes place due to the spatially indirect quantum well transition between the triangular quantum wells formed in the interface. ZnSe as a window layer material with type I alignment does not have this problem, but decreased response in the short wavelength region is observed due to misfit dislocation induced trap sites. Future prospects for the window layer development for InP are discussed. The discussion is extended also to other III-V semiconductor based solar cell materials, such as Ga/sub 0.5/In/sub 0.5/P solar cells with Al/sub x/Ga/sub 1-x/As window layers.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCPEC.1994.520562","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

Abstract

The effect of various window layers for InP solar cells are studied. Window materials that have type I and type II alignments in the window/emitter interface are compared. All window materials that form a type II alignment with InP, such as Al/sub 0.20/In/sub 0.80/P, Ga/sub 0.20/In/sub 0.80/P, Al/sub 0.55/In/sub 0.45/As and Al/sub 0.60/In/sub 0.40/P, cause a high interface recombination velocity, which deteriorates the carrier collection. This recombination takes place due to the spatially indirect quantum well transition between the triangular quantum wells formed in the interface. ZnSe as a window layer material with type I alignment does not have this problem, but decreased response in the short wavelength region is observed due to misfit dislocation induced trap sites. Future prospects for the window layer development for InP are discussed. The discussion is extended also to other III-V semiconductor based solar cell materials, such as Ga/sub 0.5/In/sub 0.5/P solar cells with Al/sub x/Ga/sub 1-x/As window layers.

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InP和其他III-V型半导体太阳能电池中窗口/发射极界面的复合机制

研究了不同窗口层对InP太阳能电池性能的影响。比较了在窗口/发射器界面中具有类型I和类型II对准的窗口材料。Al/sub 0.20/In/sub 0.80/P、Ga/sub 0.20/In/sub 0.80/P、Al/sub 0.55/In/sub 0.45/ as和Al/sub 0.60/In/sub 0.40/P等所有与InP形成II型取向的窗口材料，都会导致界面复合速度高，从而使载流子收集恶化。这种复合是由于在界面中形成的三角形量子阱之间的空间间接量子阱跃迁而发生的。ZnSe作为I型取向的窗口层材料不存在这个问题，但由于错配位错诱导的陷阱位点，在短波长区域的响应降低。展望了InP窗口层的发展前景。讨论还扩展到其他III-V型半导体太阳能电池材料，例如具有Al/sub x/Ga/sub 1-x/ as窗口层的Ga/sub 0.5/In/sub 0.5/P太阳能电池。

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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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