Olivier Weber, Y. Bogumilowicz, Thomas Ernst, J. Hartmann, F. Ducroquet, F. Andrieu, Cecilia Dupre, L. Clavelier, C. L. Royer, Nikolay Cherkashin, Martin Hÿtch, D. Rouchon, H. Dansas, A. Papon, V. Carron, C. Tabone, S. Deleonibus
{"title":"Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS","authors":"Olivier Weber, Y. Bogumilowicz, Thomas Ernst, J. Hartmann, F. Ducroquet, F. Andrieu, Cecilia Dupre, L. Clavelier, C. L. Royer, Nikolay Cherkashin, Martin Hÿtch, D. Rouchon, H. Dansas, A. Papon, V. Carron, C. Tabone, S. Deleonibus","doi":"10.1109/IEDM.2005.1609288","DOIUrl":null,"url":null,"abstract":"Epitaxial strained Si and Ge n- and p-MOSFETs with a TiN/HfO2 gate stack were fabricated with the same process for a dual channel integration scheme. Compared to the HfO2/Si reference, X1.7 strained Si electron and X9 strained Ge hole mobility gains are demonstrated, achieving symmetric n- and p-MOSFET IDsat performance. This X9 strained Ge hole mobility enhancement highly exceeds previous reported results on Ge pMOSFETs with high-k dielectrics. For the first time, such a hole mobility enhancement, theoretically predicted and experimentally reported with thick SiO2 gate dielectrics, is demonstrated with a thin high-k gate dielectric (EOT=14Aring)","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"42 1","pages":"137-140"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 29
Abstract
Epitaxial strained Si and Ge n- and p-MOSFETs with a TiN/HfO2 gate stack were fabricated with the same process for a dual channel integration scheme. Compared to the HfO2/Si reference, X1.7 strained Si electron and X9 strained Ge hole mobility gains are demonstrated, achieving symmetric n- and p-MOSFET IDsat performance. This X9 strained Ge hole mobility enhancement highly exceeds previous reported results on Ge pMOSFETs with high-k dielectrics. For the first time, such a hole mobility enhancement, theoretically predicted and experimentally reported with thick SiO2 gate dielectrics, is demonstrated with a thin high-k gate dielectric (EOT=14Aring)