A 5.1mW 74dB DR CT ΔΣ modulator with quantizer intrinsic ELD compensation achieving 75fJ/conv.-step in a 20MHz BW

Chongjun Ding, Y. Manoli, M. Keller
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引用次数: 3

Abstract

A third-order continuous-time Delta-Sigma modulator in a 130 nm CMOS technology is presented. It features a 3-bit quantizer with an intrinsic excess loop delay compensation for half a clock cycle. The compensation is performed by means of adapting the reference voltages of the comparators on a sampling-to-sampling base, thus overcoming a power consuming summation of signals in front of the quantizer. Occupying merely 0.086mm2, the modulator achieves 66.4 dB SNDR and 74.6 dB DR in a 20 MHz bandwidth using a 640 MHz clock frequency. The power consumption equals 5.1 mW drawn from a 1.2 V supply voltage, which yields a state-of-the-art Walden figure of merit FOMW of 74.7 fJ/conv-step.
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一种5.1mW 74dB DR CT ΔΣ调制器,带量化器固有场域补偿,可实现75fJ/conv。-step in a 20MHz BW
提出了一种基于130纳米CMOS技术的三阶连续时间Delta-Sigma调制器。它具有一个3位量化器,具有半个时钟周期的内在超额环路延迟补偿。补偿是通过在采样到采样的基础上调整比较器的参考电压来实现的,从而克服了量化器前面信号的功耗求和。该调制器仅占用0.086mm2,在20mhz带宽下使用640 MHz时钟频率实现66.4 dB SNDR和74.6 dB DR。在1.2 V电源电压下,功耗为5.1 mW,这就产生了最先进的瓦尔登优点曲线,即74.7 fJ/逆变步长。
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