The failure analysis of 30um*200um TSV interposer

Abstract

With the development of 3D SIP, TSV interposers are more and more widely used, and its reliability receives broader concern. As CTEs of copper and silicon are different in TSV interposer, it is easy to be affected by thermal stress and lead to failure in the process of processing and use. Therefore, an annealing treatment is usually conducted after electroplating to release stress. Different sizes and distributions of TSV produce different stress effects in the production process. In this paper, an interposer with low opening rate and large size TSV ， frequently cracks after annealing, is simulated and analyzed.