Wei Du, D. Putranto, H. Satoh, A. Ono, P. Priambodo, D. Hartanto, H. Inokawa
{"title":"Optoelectrical lifetime evaluation of single holes in SOI MOSFET","authors":"Wei Du, D. Putranto, H. Satoh, A. Ono, P. Priambodo, D. Hartanto, H. Inokawa","doi":"10.1109/SNW.2012.6243297","DOIUrl":null,"url":null,"abstract":"Optoelectrical method to evaluate the lifetime of single holes in SOI MOSFET is presented, in which the device is illuminated with a continuous light and the histograms of the digitized drain current is analyzed. It was found that smaller number of holes and the higher transverse electric field greatly enhance the hole lifetime.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Optoelectrical method to evaluate the lifetime of single holes in SOI MOSFET is presented, in which the device is illuminated with a continuous light and the histograms of the digitized drain current is analyzed. It was found that smaller number of holes and the higher transverse electric field greatly enhance the hole lifetime.
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