D. Yu, L. Liu, P. Huang, F. Zhang, B. Chen, B. Gao, Y. Hou, D. Han, Y. Wang, J. Kang, X. Zhang
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引用次数: 4
Abstract
CMOS compatible Cu/SiO2/TiN-based resistive random access memory (RRAM) was fabricated and investigated. Unique self-compliance unipolar resistive switching (RS) was observed, as well as good retention and uniformity of resistance states. A physical model based on formation and rupture of Cu conductive filament (CF) is proposed, considering both thermal and electrical effect, and verified by experiments.
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