Toward Higher Efficiency of Low-Cost Flexible Single-Crystal-Like GaAs Thin Film Solar Cells on Metal Tapes

S. Pouladi, M. Rathi, P. Dutta, S. Oh, D. Khatiwada, Yao Yao, Ying Gao, Sicong Sun, Yongkuan Li, M. Asadirad, Shahab Shervin, Jie Chen, V. Selvamanickam, J. Ryou
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Abstract

III-V compound semiconductors are the best photovoltaic solar cell (SC) materials for highest conversion efficiencies. However, they are expensive and lack in mechanical flexibility and manufacturing scalability. We developed a new PV platform where nearly single-crystalline III-V thin films were directly deposited on inexpensive polycrystalline metal tapes. While a promising efficiency of ~7.5% was achieved for flexible single junction SCs on this platform, the open circuit voltage of SC suffers from minority carrier recombination at grainboundary sites according to a simulation study. A bulk passivation treatment is conducted on the SC devices which resulted in more than 350mV increase for Voc.
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金属带上低成本柔性单晶类砷化镓薄膜太阳能电池的研究
III-V型化合物半导体是具有最高转换效率的最佳光伏太阳能电池(SC)材料。然而,它们价格昂贵,缺乏机械灵活性和制造可扩展性。我们开发了一种新的光伏平台,将几乎单晶的III-V薄膜直接沉积在廉价的多晶金属带上。在该平台上,柔性单结SC的效率可达7.5%,但在晶界处,SC的开路电压受到少数载流子复合的影响。对SC器件进行了大面积钝化处理,使Voc增加了350mV以上。
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