M. H. van der Veen, Y. Barbarin, B. Vereecke, Masahito Sugiura, Y. Kashiwagi, D. Cott, C. Huyghebaert, Z. Tokei
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引用次数: 8
Abstract
We discuss the improvement in the electrical characterization and the performance of 150 nm diameter contacts filled with carbon nanotubes (CNT) and a Cu damascene top metal on 200mm wafers. The excellent agreement between the yield curves for the parallel and single contacts shows that a reliable electrical characterization is obtained. We demonstrate that integration changes improved the resistivity of the CNT contact significantly by reducing it from 11.8·103 μΩ·cm down to 5.1·103 μΩ·cm. Finally, a length scaling of the CNT contacts was used to find the individual contributors to the lowering of the single CNT contact resistance.
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