{"title":"High-voltage LDMOS compact model for RF applications","authors":"M. Willemsen, R. Van Langevelde","doi":"10.1109/IEDM.2005.1609308","DOIUrl":null,"url":null,"abstract":"We present a compact model for RF-LDMOS transistors. The model is based on a continuous description of the lateral electric field, and contains the physical phenomena of partial lateral depletion and velocity saturation in the drift region. The model has been validated with device simulations and measurements","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"2 1","pages":"208-211"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
We present a compact model for RF-LDMOS transistors. The model is based on a continuous description of the lateral electric field, and contains the physical phenomena of partial lateral depletion and velocity saturation in the drift region. The model has been validated with device simulations and measurements
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