In-doping collaboratively controlling back interface and bulk defects to achieve efficient flexible CZTSSe solar cells

IF 14 1区化学 Q1 CHEMISTRY, APPLIED 能源化学 Pub Date : 2023-11-03 DOI:10.1016/j.jechem.2023.10.034

Quanzhen Sun , Yifan Li , Caixia Zhang , Shunli Du , Weihao Xie , Jionghua Wu , Qiao Zheng , Hui Deng , Shuying Cheng

{"title":"In-doping collaboratively controlling back interface and bulk defects to achieve efficient flexible CZTSSe solar cells","authors":"Quanzhen Sun , Yifan Li , Caixia Zhang , Shunli Du , Weihao Xie , Jionghua Wu , Qiao Zheng , Hui Deng , Shuying Cheng","doi":"10.1016/j.jechem.2023.10.034","DOIUrl":null,"url":null,"abstract":"<div>Focusing on the low open circuit voltage (VOC) and fill factor (FF) in flexible Cu2ZnSn(S,Se)4 (CZTSSe) solar cells, indium (In) ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device. The results show that In doping effectively inhibits the formation of secondary phase (Cu(S,Se)2) and VSn defects. Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects (CuSn defects) in CZTSSe bulk are passivated. Moreover, the carrier concentration is increased and the VOC deficit (VOC,def) is decreased significantly due to In doping. Finally, the flexible CZTSSe solar cell with 10.01% power conversion efficiency (PCE) has been obtained. The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.</div>","PeriodicalId":67498,"journal":{"name":"能源化学","volume":null,"pages":null},"PeriodicalIF":14.0000,"publicationDate":"2023-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"能源化学","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2095495623006046","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, APPLIED","Score":null,"Total":0}

引用次数: 1

Abstract

Focusing on the low open circuit voltage (V_OC) and fill factor (FF) in flexible Cu₂ZnSn(S,Se)₄ (CZTSSe) solar cells, indium (In) ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device. The results show that In doping effectively inhibits the formation of secondary phase (Cu(S,Se)₂) and V_Sn defects. Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects (Cu_Sn defects) in CZTSSe bulk are passivated. Moreover, the carrier concentration is increased and the V_OC deficit (V_OC,def) is decreased significantly due to In doping. Finally, the flexible CZTSSe solar cell with 10.01% power conversion efficiency (PCE) has been obtained. The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.

Abstract Image

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

内掺杂协同控制后界面和本体缺陷，实现高效柔性CZTSSe太阳能电池

针对柔性Cu2ZnSn(S,Se)4 (CZTSSe)太阳能电池的低开路电压(VOC)和低填充因子(FF)问题，在靠近Mo箔的CZTSSe吸收层中引入铟(in)离子，对CZTSSe的背界面进行修饰，同时钝化CZTSSe体中的深层缺陷，从而提高柔性器件的性能。结果表明，In的掺杂有效抑制了二次相(Cu(S,Se)2)和VSn缺陷的形成。进一步的研究表明，后界面的势垒高度降低，CZTSSe块体中的深层缺陷(CuSn缺陷)钝化。此外，由于掺杂了In，载流子浓度增加，VOC亏缺(VOC,def)显著降低。最后获得了功率转换效率(PCE)为10.01%的柔性CZTSSe太阳能电池。通过掺入铟实现界面改性和本体缺陷钝化的协同策略，为制备高效柔性kester酸基太阳能电池提供了新的思路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

能源化学

CiteScore

23.60

自引率

0.00%

发文量

2875