Surface-functionalized hole-selective monolayer for high efficiency single-junction wide-bandgap and monolithic tandem perovskite solar cells

IF 14 1区 化学 Q1 CHEMISTRY, APPLIED 能源化学 Pub Date : 2023-09-28 DOI:10.1016/j.jechem.2023.09.023
Devthade Vidyasagar , Yeonghun Yun , Jae Yu Cho , Hyemin Lee , Kyung Won Kim , Yong Tae Kim , Sung Woong Yang , Jina Jung , Won Chang Choi , Seonu Kim , Rajendra Kumar Gunasekaran , Seok Beom Kang , Kwang Heo , Dong Hoe Kim , Jaeyeong Heo , Sangwook Lee
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Abstract

Carbazole moiety-based 2PACz ([2-(9H-carbazol-9-yl)ethyl]phosphonic acid) self-assembled monolayers (SAMs) are excellent hole-selective contact (HSC) materials with abilities to excel the charge-transfer-dynamics of perovskite solar cells (PSCs). Herein, we report a facile but powerful method to functionalize the surface of 2PACz-SAM, by which reproducible, highly stable, high-efficiency wide-bandgap PSCs can be obtained. The 2PACz surface treatment with various donor number solvents improves assembly of 2PACz-SAM and leave residual surface-bound solvent molecules on 2PACz-SAM, which increases perovskite grain size, retards halide segregation, and accelerates hole extraction. The surface functionalization achieves a high power conversion efficiency (PCE) of 17.62% for a single-junction wide-bandgap (∼1.77 eV) PSC. We also demonstrate a monolithic all-perovskite tandem solar cell using surface-engineered HSC, showing high PCE of 24.66% with large open-circuit voltage of 2.008 V and high fill-factor of 81.45%. Our results suggest this simple approach can further improve the tandem device, when coupled with a high-performance narrow-bandgap sub-cell.

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高效单结宽禁带单片串联钙钛矿太阳能电池的表面功能化孔选择单层
基于咔唑基团的2PACz ([2-(9h -咔唑-9-酰基)乙基]膦酸)自组装单层膜(SAMs)是一种优异的空穴选择接触(HSC)材料,具有优异的钙钛矿太阳能电池(PSCs)的电荷转移动力学性能。在此,我们报告了一种简单而有效的方法来功能化2PACz-SAM表面,通过该方法可以获得可重复的,高稳定的,高效率的宽带隙PSCs。不同给体数目的溶剂对2PACz表面进行处理,改善了2PACz- sam的组装,并在2PACz- sam上留下了残留的表面结合溶剂分子,从而增加了钙钛矿晶粒尺寸,延缓了卤化物偏析,加速了空穴萃取。对于单结宽带隙(约1.77 eV) PSC,表面功能化实现了17.62%的高功率转换效率(PCE)。我们还展示了使用表面工程HSC的单片全钙钛矿串联太阳能电池,其PCE高达24.66%,开路电压高达2.008 V,填充因子高达81.45%。我们的研究结果表明,当与高性能窄带隙子单元耦合时,这种简单的方法可以进一步改进串联器件。
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2875
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