基于0.13/spl mu/m CMOS的紧凑型5GHz驻波振荡器压控振荡器

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI:10.1109/RFIC.2007.380953

D. Shi, J. East, M. Flynn

{"title":"基于0.13/spl mu/m CMOS的紧凑型5GHz驻波振荡器压控振荡器","authors":"D. Shi, J. East, M. Flynn","doi":"10.1109/RFIC.2007.380953","DOIUrl":null,"url":null,"abstract":"A novel on-chip capacitively-loaded, transmission-line-standing-wave resonator is employed in a low phase noise VCO, to achieve a measured phase noise of-117dBc/Hz at a 1MHz offset. The prototype 5 GHz VCO, implemented in 0.13 mum CMOS, dissipates 3 mW from a 1.2 V supply, and occupies a compact die area of 0.11mm2.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"11 11","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A Compact 5GHz Standing-Wave Resonator-based VCO in 0.13/spl mu/m CMOS\",\"authors\":\"D. Shi, J. East, M. Flynn\",\"doi\":\"10.1109/RFIC.2007.380953\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel on-chip capacitively-loaded, transmission-line-standing-wave resonator is employed in a low phase noise VCO, to achieve a measured phase noise of-117dBc/Hz at a 1MHz offset. The prototype 5 GHz VCO, implemented in 0.13 mum CMOS, dissipates 3 mW from a 1.2 V supply, and occupies a compact die area of 0.11mm2.\",\"PeriodicalId\":356468,\"journal\":{\"name\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"volume\":\"11 11\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2007.380953\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

在低相位噪声压控振荡器中采用了一种新型片上电容负载的传输线驻波谐振器，在1MHz偏置下实现了117dbc /Hz的相位噪声测量。原型5 GHz压控振荡器采用0.13 μ m CMOS, 1.2 V电源功耗为3 mW，芯片面积紧凑，为0.11mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A Compact 5GHz Standing-Wave Resonator-based VCO in 0.13/spl mu/m CMOS

A novel on-chip capacitively-loaded, transmission-line-standing-wave resonator is employed in a low phase noise VCO, to achieve a measured phase noise of-117dBc/Hz at a 1MHz offset. The prototype 5 GHz VCO, implemented in 0.13 mum CMOS, dissipates 3 mW from a 1.2 V supply, and occupies a compact die area of 0.11mm2.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

自引率

0.00%

发文量

期刊最新文献

A Compact 5GHz Standing-Wave Resonator-based VCO in 0.13/spl mu/m CMOS A Sub-10mW 2Mbps BFSK Transceiver at 1.35 to 1.75GHz Built-in Self Testing of a DRP-Based GSM Transmitter A 0.13-/spl mu/m CMOS Digital Phase Shifter for K-band Phased Arrays Experimental Characterization of the Effect of Metal Dummy Fills on Spiral Inductors