S. Bedell, A. Reznicek, B. Yang, H. Hovel, J. Ott, K. Fogel, A. Domenicucci, D. Sadana
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引用次数: 1
摘要
P. M. J. Maree等人(1987)和S. W. Bedell等人(2004)的研究表明，在拉伸应变下，硅层中会形成层错(SF)缺陷。在这项工作中，我们研究了在低缺陷SiGe梯度缓冲层上生长的应变硅层中SF缺陷的发展。硅层在不同的温度下生长到不同的厚度，并使用S. W. Bedell等人(2004)提出的专门蚀刻技术测量所得的SF密度。
Development of stacking faults in strained silicon layers
Stacking fault (SF) defects have been shown to form in Si layers under tensile strain based in P. M. J. Maree et al. (1987) and S. W. Bedell et al. (2004). In this work, we investigate the development of SF defects in strained silicon layers grown on low-defect SiGe graded buffer layers. Si layers were grown to various thicknesses at different temperatures and the resulting SF densities are measured using a specialized etching technique as presented in S. W. Bedell et al. (2004).
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