{"title":"晶圆级无凸点Cu-Cu键合的力学特性","authors":"L. Peng, L. Zhang, H.Y. Li, G. Lo, C. Tan","doi":"10.1109/EPTC.2012.6507123","DOIUrl":null,"url":null,"abstract":"In this paper, the mechanical properties of wafer-level high density Cu-Cu bonding are analyzed. The fabrication flow is optimized based on surface cleanliness, wafer uniformity, W2W alignment accuracy and oxide recess for successful bonding. Post- bonding characterizations include shear test and failure analysis to identify the mechanical strength and failure mechanisms. It is found that failures at Cu-Cu bonding interface are largely attributed to wafer non-uniformity.","PeriodicalId":431312,"journal":{"name":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","volume":"27 12","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Mechanical characterization of wafer level bump-less Cu-Cu bonding\",\"authors\":\"L. Peng, L. Zhang, H.Y. Li, G. Lo, C. Tan\",\"doi\":\"10.1109/EPTC.2012.6507123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the mechanical properties of wafer-level high density Cu-Cu bonding are analyzed. The fabrication flow is optimized based on surface cleanliness, wafer uniformity, W2W alignment accuracy and oxide recess for successful bonding. Post- bonding characterizations include shear test and failure analysis to identify the mechanical strength and failure mechanisms. It is found that failures at Cu-Cu bonding interface are largely attributed to wafer non-uniformity.\",\"PeriodicalId\":431312,\"journal\":{\"name\":\"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)\",\"volume\":\"27 12\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPTC.2012.6507123\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2012.6507123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Mechanical characterization of wafer level bump-less Cu-Cu bonding
In this paper, the mechanical properties of wafer-level high density Cu-Cu bonding are analyzed. The fabrication flow is optimized based on surface cleanliness, wafer uniformity, W2W alignment accuracy and oxide recess for successful bonding. Post- bonding characterizations include shear test and failure analysis to identify the mechanical strength and failure mechanisms. It is found that failures at Cu-Cu bonding interface are largely attributed to wafer non-uniformity.
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