{"title":"TDD-LTE BTS PA中引起ACLR退化的GaN HEMT门滞后等效电路建模及参数提取","authors":"Toshihiro Shimoda, Yoji Murau, T. Kaneko","doi":"10.1109/BCICTS.2018.8551149","DOIUrl":null,"url":null,"abstract":"This paper deals with the impact of GaN HEMT gate lag on radio performance of LTE TDD amplifier with digital predistorter (DPD). The mechanism of the gate lag with equivalent circuit modelling of GaN HEMT is investigated assuming RC delay circuit. Circuit parameters are extracted experimentally by measuring time constants with various conditions. Parameters related to gate lag is directly correlated with system radio performance for 4G mobile communications. Based on the extracted parameters and comparison of system parameters between 4G-LTE and 5G NR, device parameters required for 5G applications are proposed.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"30 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Equivalent Circuit Modelling and Parameter Extraction of GaN HEMT Gate Lag Inducing ACLR Degradation of TDD-LTE BTS PA\",\"authors\":\"Toshihiro Shimoda, Yoji Murau, T. Kaneko\",\"doi\":\"10.1109/BCICTS.2018.8551149\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper deals with the impact of GaN HEMT gate lag on radio performance of LTE TDD amplifier with digital predistorter (DPD). The mechanism of the gate lag with equivalent circuit modelling of GaN HEMT is investigated assuming RC delay circuit. Circuit parameters are extracted experimentally by measuring time constants with various conditions. Parameters related to gate lag is directly correlated with system radio performance for 4G mobile communications. Based on the extracted parameters and comparison of system parameters between 4G-LTE and 5G NR, device parameters required for 5G applications are proposed.\",\"PeriodicalId\":272808,\"journal\":{\"name\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"30 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS.2018.8551149\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8551149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Equivalent Circuit Modelling and Parameter Extraction of GaN HEMT Gate Lag Inducing ACLR Degradation of TDD-LTE BTS PA
This paper deals with the impact of GaN HEMT gate lag on radio performance of LTE TDD amplifier with digital predistorter (DPD). The mechanism of the gate lag with equivalent circuit modelling of GaN HEMT is investigated assuming RC delay circuit. Circuit parameters are extracted experimentally by measuring time constants with various conditions. Parameters related to gate lag is directly correlated with system radio performance for 4G mobile communications. Based on the extracted parameters and comparison of system parameters between 4G-LTE and 5G NR, device parameters required for 5G applications are proposed.
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