{"title":"一个650 V, 3 A三相全集成无刷直流电机驱动器与电荷泵和电平移位","authors":"V. D. Smedt, J. Thoné, M. Wens","doi":"10.1109/ESSCIRC.2016.7598296","DOIUrl":null,"url":null,"abstract":"A 650 V three-phase IGBT motor driver is presented in this article. Apart from the power transistors and predrivers, also freewheeling diodes are present in the output power stage to drive inductive loads. The 15 V overdrive voltage as well as all other floating supplies are generated on-chip by means of a charge pump and cascoded current mirrors. The input signals for all switches are at ground level and level-shifted internally. Each half-bridge is able to switch at 20 kHz a 1.5 A current at 600 V and a 3 A current at 300 V. The ground connection contains a current shunt and a sense-amplifier, which can be used as a feedback signal in the BLDC control loop. The system is implemented in a 1 μm SoI technology with 650 V IGBT transistors.","PeriodicalId":246471,"journal":{"name":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 650 V, 3 A three-phase fully-integrated BLDC motor driver with charge pump and level shifters\",\"authors\":\"V. D. Smedt, J. Thoné, M. Wens\",\"doi\":\"10.1109/ESSCIRC.2016.7598296\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 650 V three-phase IGBT motor driver is presented in this article. Apart from the power transistors and predrivers, also freewheeling diodes are present in the output power stage to drive inductive loads. The 15 V overdrive voltage as well as all other floating supplies are generated on-chip by means of a charge pump and cascoded current mirrors. The input signals for all switches are at ground level and level-shifted internally. Each half-bridge is able to switch at 20 kHz a 1.5 A current at 600 V and a 3 A current at 300 V. The ground connection contains a current shunt and a sense-amplifier, which can be used as a feedback signal in the BLDC control loop. The system is implemented in a 1 μm SoI technology with 650 V IGBT transistors.\",\"PeriodicalId\":246471,\"journal\":{\"name\":\"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2016.7598296\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2016.7598296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
本文介绍了一种650v三相IGBT电机驱动器。除了功率晶体管和预驱动器外,在输出功率级中还存在自由转动二极管来驱动感性负载。15 V的超驱动电压以及所有其他浮动电源都是通过电荷泵和级联电流镜在芯片上产生的。所有开关的输入信号都在地电平和内部电平移位。每个半桥能够在20khz时切换1.5 a的600 V电流和3a的300 V电流。接地连接包含电流分流器和感测放大器,可作为无刷直流控制回路中的反馈信号。该系统采用1 μm SoI技术,采用650 V IGBT晶体管。
A 650 V, 3 A three-phase fully-integrated BLDC motor driver with charge pump and level shifters
A 650 V three-phase IGBT motor driver is presented in this article. Apart from the power transistors and predrivers, also freewheeling diodes are present in the output power stage to drive inductive loads. The 15 V overdrive voltage as well as all other floating supplies are generated on-chip by means of a charge pump and cascoded current mirrors. The input signals for all switches are at ground level and level-shifted internally. Each half-bridge is able to switch at 20 kHz a 1.5 A current at 600 V and a 3 A current at 300 V. The ground connection contains a current shunt and a sense-amplifier, which can be used as a feedback signal in the BLDC control loop. The system is implemented in a 1 μm SoI technology with 650 V IGBT transistors.