低成本硅基可调谐高性能谐振腔增强光电探测器的制备

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416677

R. Mao, C.B. Li, Y. Zuo, B. Cheng, X. Teng, L. Luo, J.Z. Yu, Q.M. Wang

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引用次数: 2

摘要

采用溶胶-凝胶键合的方法制备了低成本的硅基可调谐InGaAs RCE光电探测器，工作频率为1.3/spl sim/1.6 /spl mu/m。调谐范围为14.5 nm，在1476 nm处量子效率为44%，3db带宽为1.8 GHz。

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Fabrication of low cost Si-based tunable high performance resonant cavity enhanced photodetectors

Low cost Si-based tunable InGaAs RCE photodetectors operating at 1.3/spl sim/1.6 /spl mu/m were fabricated using sol-gel bonding. A tuning range of 14.5 nm, a quantum efficiency of 44% at 1476 nm and a 3-dB bandwidth of 1.8 GHz were obtained.

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First IEEE International Conference on Group IV Photonics, 2004.

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