一种可植入自复位CMOS图像传感器的噪声性能

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867073

Takahiro Yamaguchi, Yoshinori Sunaga, M. Haruta, T. Noda, K. Sasagawa, T. Tokuda, J. Ohta

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引用次数: 0

摘要

为了提高植入式成像器件的信噪比，我们开发并评估了一种具有自复位功能的小型化CMOS图像传感器。该传感器能够在高强度照明下成像，其中由射击噪声确定的峰值信噪比增加。像素尺寸为15 μm²，与神经细胞一样小，可用于植入图像传感器。光照为1.7 × 10-3 W/cm2，帧率约为230 fps，信噪比超过60 dB。

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Noise performance of an implantable self-reset CMOS image sensor

We developed and evaluated a miniaturized CMOS image sensor with self-reset function in order to improve signal-to-noise ratio (SNR) of an implantable imaging device. The sensor is capable to image under high intensity illumination where the peak SNR determined by the shot-noise is increased. The pixel size is 15-μm square, which is as small as neural cells and acceptable for implantable image sensor. With illumination of 1.7 × 10-3 W/cm2, and a frame rate of approximately 230 fps, SNR over 60 dB was achieved.

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2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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