第十届集成电路物理与失效分析国际研讨会论文集。IPFA 2003

Alastair Trigg, Daniel Chan, John Thong
{"title":"第十届集成电路物理与失效分析国际研讨会论文集。IPFA 2003","authors":"Alastair Trigg, Daniel Chan, John Thong","doi":"10.1109/IPFA.2003.1222709","DOIUrl":null,"url":null,"abstract":"The following topics were dealt: Failure analysis I; reliability and failure analysis in specialist devices; failure analysis II; advanced interconnects I; failure analysis III; packaging related failure mechanisms; advanced interconnects; dielectrics and hot carrier reliability I; dielectrics and hot carrier reliability II; EOS/ESD and CMOS latchup; failure analysis IV; failure analysis V.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"authors\":\"Alastair Trigg, Daniel Chan, John Thong\",\"doi\":\"10.1109/IPFA.2003.1222709\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The following topics were dealt: Failure analysis I; reliability and failure analysis in specialist devices; failure analysis II; advanced interconnects I; failure analysis III; packaging related failure mechanisms; advanced interconnects; dielectrics and hot carrier reliability I; dielectrics and hot carrier reliability II; EOS/ESD and CMOS latchup; failure analysis IV; failure analysis V.\",\"PeriodicalId\":266326,\"journal\":{\"name\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2003.1222709\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222709","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

讨论了以下主题:失效分析I;专业设备的可靠性和失效分析;失效分析II;高级互连I;失效分析III;包装相关失效机制;先进的互联;电介质和热载流子可靠性I;电介质和热载流子可靠性II;EOS/ESD和CMOS锁存;故障分析IV;故障分析;
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003
The following topics were dealt: Failure analysis I; reliability and failure analysis in specialist devices; failure analysis II; advanced interconnects I; failure analysis III; packaging related failure mechanisms; advanced interconnects; dielectrics and hot carrier reliability I; dielectrics and hot carrier reliability II; EOS/ESD and CMOS latchup; failure analysis IV; failure analysis V.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Real case studies of fast wafer level reliability (FWLR) EM test as process reliability monitor methodology Identify Optical Proximity Correction (OPC) issue in 0.13 /spl mu/m technology development Progressive breakdown statistics in ultra-thin silicon dioxides Failures in copper interconnects-localization, analysis and degradation mechanisms Reliability oriented process and device simulations of power VDMOS transistors in Bipolar/CMOS/DMOS technology
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1