S. Smith, G. Book, W. Li, Y. Sun, P. Gillespie, M. Tuominen, K. Pfeifer
{"title":"ALD WN/sub x/C/sub y/作为铜扩散屏障的应用","authors":"S. Smith, G. Book, W. Li, Y. Sun, P. Gillespie, M. Tuominen, K. Pfeifer","doi":"10.1109/IITC.2003.1219734","DOIUrl":null,"url":null,"abstract":"A 2.7 nm ALD WN/sub x/C/sub y/ copper barrier was integrated into fully functional backend dual-damascene devices built in SiO/sub 2/ on 200-mm wafers at International Sematech. Electromigration results were extraordinary, with average time to failure more than 10 times longer than standard PVD Ta. Electrical and physical results suggest that ultrathin WN/sub x/C/sub Y/ is an excellent copper barrier and meets the requirements for integration, including: Via resistance, electromigration, barrier integrity, film continuity, etc.","PeriodicalId":212619,"journal":{"name":"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The application of ALD WN/sub x/C/sub y/ as a copper diffusion barrier\",\"authors\":\"S. Smith, G. Book, W. Li, Y. Sun, P. Gillespie, M. Tuominen, K. Pfeifer\",\"doi\":\"10.1109/IITC.2003.1219734\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2.7 nm ALD WN/sub x/C/sub y/ copper barrier was integrated into fully functional backend dual-damascene devices built in SiO/sub 2/ on 200-mm wafers at International Sematech. Electromigration results were extraordinary, with average time to failure more than 10 times longer than standard PVD Ta. Electrical and physical results suggest that ultrathin WN/sub x/C/sub Y/ is an excellent copper barrier and meets the requirements for integration, including: Via resistance, electromigration, barrier integrity, film continuity, etc.\",\"PeriodicalId\":212619,\"journal\":{\"name\":\"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2003.1219734\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2003.1219734","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The application of ALD WN/sub x/C/sub y/ as a copper diffusion barrier
A 2.7 nm ALD WN/sub x/C/sub y/ copper barrier was integrated into fully functional backend dual-damascene devices built in SiO/sub 2/ on 200-mm wafers at International Sematech. Electromigration results were extraordinary, with average time to failure more than 10 times longer than standard PVD Ta. Electrical and physical results suggest that ultrathin WN/sub x/C/sub Y/ is an excellent copper barrier and meets the requirements for integration, including: Via resistance, electromigration, barrier integrity, film continuity, etc.
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