{"title":"结合聚焦离子束(FIB)和透射电子显微镜(TEM)作为低于0.25 /spl mu/m的缺陷表征工具","authors":"Y. Doong, Jui-Mei Fu, Y. Hsieh","doi":"10.1109/IPFA.1997.638125","DOIUrl":null,"url":null,"abstract":"A sub-0.25 /spl mu/m defect characterization study was conducted by using in-line inspection machines to locate defects and focused ion beam system (FIB) equipped with a navigation tool to generate cross-sectional transmission electron microscopy (TEM) samples/sup 4-8/. Two failure analysis cases regarding invisible defects in optical microscope were reported in this work. One described the micro-trench formed at the bird's beak of field oxide, and the other one illustrated the etching pit formation during Poly-Si etching process.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Combination of focused ion beam (FIB) and transmission electron microscopy (TEM) as sub-0.25 /spl mu/m defect characterization tool\",\"authors\":\"Y. Doong, Jui-Mei Fu, Y. Hsieh\",\"doi\":\"10.1109/IPFA.1997.638125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A sub-0.25 /spl mu/m defect characterization study was conducted by using in-line inspection machines to locate defects and focused ion beam system (FIB) equipped with a navigation tool to generate cross-sectional transmission electron microscopy (TEM) samples/sup 4-8/. Two failure analysis cases regarding invisible defects in optical microscope were reported in this work. One described the micro-trench formed at the bird's beak of field oxide, and the other one illustrated the etching pit formation during Poly-Si etching process.\",\"PeriodicalId\":159177,\"journal\":{\"name\":\"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-07-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.1997.638125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.1997.638125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Combination of focused ion beam (FIB) and transmission electron microscopy (TEM) as sub-0.25 /spl mu/m defect characterization tool
A sub-0.25 /spl mu/m defect characterization study was conducted by using in-line inspection machines to locate defects and focused ion beam system (FIB) equipped with a navigation tool to generate cross-sectional transmission electron microscopy (TEM) samples/sup 4-8/. Two failure analysis cases regarding invisible defects in optical microscope were reported in this work. One described the micro-trench formed at the bird's beak of field oxide, and the other one illustrated the etching pit formation during Poly-Si etching process.
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