W. Loh, B.J. Cho, M. Li, D. Chan, C.H. Ang, Z.J. Zhen, D. Kwong
{"title":"超薄二氧化硅的递进击穿统计","authors":"W. Loh, B.J. Cho, M. Li, D. Chan, C.H. Ang, Z.J. Zhen, D. Kwong","doi":"10.1109/IPFA.2003.1222757","DOIUrl":null,"url":null,"abstract":"We report an area-dependent gate current increase in 13.4 /spl Aring/ oxide. Area dependence studies show that larger sample have smaller current density increases. Using leakage current density increase as failure criterion, it was shown that smaller area samples will have shorter lifetime. By using a discrete current formalism to describe the multiple degraded spots, it was shown that leakage current can be used to deduce that distribution statistics of the oxide and that the multiple spots distribution model can be described by Weibull's statistics.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Progressive breakdown statistics in ultra-thin silicon dioxides\",\"authors\":\"W. Loh, B.J. Cho, M. Li, D. Chan, C.H. Ang, Z.J. Zhen, D. Kwong\",\"doi\":\"10.1109/IPFA.2003.1222757\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an area-dependent gate current increase in 13.4 /spl Aring/ oxide. Area dependence studies show that larger sample have smaller current density increases. Using leakage current density increase as failure criterion, it was shown that smaller area samples will have shorter lifetime. By using a discrete current formalism to describe the multiple degraded spots, it was shown that leakage current can be used to deduce that distribution statistics of the oxide and that the multiple spots distribution model can be described by Weibull's statistics.\",\"PeriodicalId\":266326,\"journal\":{\"name\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2003.1222757\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Progressive breakdown statistics in ultra-thin silicon dioxides
We report an area-dependent gate current increase in 13.4 /spl Aring/ oxide. Area dependence studies show that larger sample have smaller current density increases. Using leakage current density increase as failure criterion, it was shown that smaller area samples will have shorter lifetime. By using a discrete current formalism to describe the multiple degraded spots, it was shown that leakage current can be used to deduce that distribution statistics of the oxide and that the multiple spots distribution model can be described by Weibull's statistics.