基于纳米晶硅敏化掺铒二氧化硅的470nm led泵浦光波导放大器

Jinku Lee, J. Shin, N. Park
{"title":"基于纳米晶硅敏化掺铒二氧化硅的470nm led泵浦光波导放大器","authors":"Jinku Lee, J. Shin, N. Park","doi":"10.1109/GROUP4.2004.1416736","DOIUrl":null,"url":null,"abstract":"We demonstrate optical gain at 1.5 /spl mu/m in Si nanocrystal-sensitized, Er-doped silica waveguide using a commercial, low-cost 470 nm LED array in top-pumping configuration. Experimental evidence of full inversion with maximum possible gain of 3 dB/cm is presented.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"470 nm LED-pumped optical waveguide amplifier based on nanocrystal-Si sensitized, Er-doped silica\",\"authors\":\"Jinku Lee, J. Shin, N. Park\",\"doi\":\"10.1109/GROUP4.2004.1416736\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate optical gain at 1.5 /spl mu/m in Si nanocrystal-sensitized, Er-doped silica waveguide using a commercial, low-cost 470 nm LED array in top-pumping configuration. Experimental evidence of full inversion with maximum possible gain of 3 dB/cm is presented.\",\"PeriodicalId\":299690,\"journal\":{\"name\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2004.1416736\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416736","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

我们展示了在1.5 /spl mu/m的硅纳米晶体敏化,掺铒硅波导中使用商业,低成本,顶部泵浦配置的470nm LED阵列的光学增益。给出了最大增益为3 dB/cm的全反转的实验证据。
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470 nm LED-pumped optical waveguide amplifier based on nanocrystal-Si sensitized, Er-doped silica
We demonstrate optical gain at 1.5 /spl mu/m in Si nanocrystal-sensitized, Er-doped silica waveguide using a commercial, low-cost 470 nm LED array in top-pumping configuration. Experimental evidence of full inversion with maximum possible gain of 3 dB/cm is presented.
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