压阻式硅压力传感器电阻场依赖性仿真及屏蔽层改进

2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2013-04-14 DOI:10.1109/EUROSIME.2013.6529926

Gang Cao, Chaojun Liu, Xiaogang Liu, Xuefang Wang, Sheng Liu

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引用次数: 2

摘要

本文采用两种结构来模拟硅压力传感器中压敏电阻的电阻电场依赖性。两种结构的区别是一种有屏蔽层，另一种没有屏蔽层。仿真结果表明，屏蔽层可以屏蔽来自外部的电场，也可以屏蔽由固定氧化物电荷引起的电场，这对提高压敏电阻的稳定性非常有用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Resistance electric filed dependence simulation of piezoresistive silicon pressure sensor and improvement by shield layer

This paper models two structures for simulating the resistance electric field dependence of piezoresistor in silicon pressure sensor. The difference of the two structures is one with a shield layer and the other one without it. The simulation results show that the shield layer can shield the electric field no matter where it origins externally or it is caused by fixed oxide charges, which is very useful to improve the stability of the piezoresistor.

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2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

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