用碳复刻法制备FIB精密TEM样品

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 1997-07-21 DOI:10.1109/IPFA.1997.638150

T. Sheng, G. Goh, C. Tung, J.L.F. Wang, J. K. Cheng

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引用次数: 4

摘要

本文报道了一种新的精密透射电镜(XTEM)样品制备方法。不需要机械抛光和研磨。该方法与使用聚焦离子束(FIB)的传统方法的主要区别在于，用FIB切片的样品可以直接从晶圆部位提取并转移到碳支撑膜上进行TEM检查。使用该技术，可以轻松快速地制备横截面TEM样品，从而提高生产率和周转时间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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FIB precision TEM sample preparation using carbon replica

A new precision transmission electron microscopy (XTEM) sample preparation method was developed and reported here. No mechanical polishing and grinding are needed. The main difference of this method over conventional method using focused ion beam (FIB) is that the sample sectioned with FIB can be extracted directly from the wafer site and transferred to a carbon supporting film for TEM examination. With this technique, a cross section TEM sample can be prepared easily and quickly, thus enhancing both productivity and turnaround time.

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Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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