H. Pu, Zhiming Chen, Xianfeng Feng, B. Ma, Liucheng Li
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引用次数: 0
摘要
提出了一种新型的近红外光激活的碳化硅达林顿异质结晶体管功率开关，该开关采用SiCGe/SiC pn通过光学照明产生基极电流。通过二维数值模拟MEDICI，在选取合适的si -x- ycxgey组成参数的情况下，可以用近红激光束触发SiCGe/SiC光电探测器。对近红外光激活功率开关的性能进行了仿真，结果表明，当光强为1.0 w /cm2时，光激活器件在0.85/spl mu/m时具有很好的开关特性。根据模拟结果，电流密度的分布预示着辅助晶体管首先被低密度的光电流导通，然后主晶体管导通。导通状态下装置的集电极电流集中在主发射极下方的区域。
Simulation of a near infrared light-activated 4H-SiC Darlington transistor switches
The novel near infrared light-activated Darlington heterojunction transistor power switch made of SiC has been proposed, in which SiCGe/SiC pn is employed to produce a base current by means of optical illumination. By using two-dimensional numerical simulation MEDICI, the SiCGe/SiC photodetector can be triggered by a near infer-red laser beam if the composition parameters of the Sil-x-yCxGey have been chosen properly. Performance of the near Infrared light-activated power switch was simulated, which has shown that the light-activated device has very good switching characteristics at 0.85/spl mu/m for optical intensity of 1.0 Watt/cm2. Based on our simulation results, the distribution of current density predicts that the auxiliary transistor is turned on at first by a low density of photocurrent and then the main transistor is turned on. The collector current of the device in the on-state is concentrated in a region underneath the main emitter.
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