精确和鲁棒使能控制电路的LDO电压调节器

C. Pleşa, C. Răducan, M. Neag, L. Radoias
{"title":"精确和鲁棒使能控制电路的LDO电压调节器","authors":"C. Pleşa, C. Răducan, M. Neag, L. Radoias","doi":"10.1109/SMICND.2015.7355238","DOIUrl":null,"url":null,"abstract":"This paper presents novel circuit solutions for two issues related to the Enable control of low-dropout (LDO) voltage regulators: setting precise voltage thresholds for the ON/OFF states of the LDO and ensuring that in the OFF state the LDO output is not affected by fast variations of the supply voltage. First, an Enable circuit with hysteresis and temperature compensated thresholds is described: the accuracy of its threshold voltages - including their low temperature coefficients - are predicted by analytical analysis and validated by measurements performed on a silicon implementation. Second, a simple yet effective comparator is proposed, able to significantly reduce the effect the supply voltage variations have on the output voltage when the regulator is in OFF state. Simulation results show that, when the supply voltage varies from 0 to 28V in 28μs, the overshoot of the output voltage is reduced from 5.5V to under 200mV, that is by a factor of 35.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Precise and robust enable control circuitry for LDO voltage regulators\",\"authors\":\"C. Pleşa, C. Răducan, M. Neag, L. Radoias\",\"doi\":\"10.1109/SMICND.2015.7355238\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents novel circuit solutions for two issues related to the Enable control of low-dropout (LDO) voltage regulators: setting precise voltage thresholds for the ON/OFF states of the LDO and ensuring that in the OFF state the LDO output is not affected by fast variations of the supply voltage. First, an Enable circuit with hysteresis and temperature compensated thresholds is described: the accuracy of its threshold voltages - including their low temperature coefficients - are predicted by analytical analysis and validated by measurements performed on a silicon implementation. Second, a simple yet effective comparator is proposed, able to significantly reduce the effect the supply voltage variations have on the output voltage when the regulator is in OFF state. Simulation results show that, when the supply voltage varies from 0 to 28V in 28μs, the overshoot of the output voltage is reduced from 5.5V to under 200mV, that is by a factor of 35.\",\"PeriodicalId\":325576,\"journal\":{\"name\":\"2015 International Semiconductor Conference (CAS)\",\"volume\":\"160 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2015.7355238\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2015.7355238","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了与低降(LDO)稳压器使能控制相关的两个问题的新颖电路解决方案:为LDO的开/关状态设置精确的电压阈值,并确保在关闭状态下LDO输出不受电源电压快速变化的影响。首先,描述了一个具有滞后和温度补偿阈值的使能电路:其阈值电压的准确性-包括其低温系数-通过分析分析预测,并通过在硅实现上进行的测量进行验证。其次,提出了一种简单而有效的比较器,能够显著降低稳压器处于OFF状态时电源电压变化对输出电压的影响。仿真结果表明,当电源电压在28μs内从0到28V变化时,输出电压的过调量从5.5V降低到200mV以下,降低了35倍。
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Precise and robust enable control circuitry for LDO voltage regulators
This paper presents novel circuit solutions for two issues related to the Enable control of low-dropout (LDO) voltage regulators: setting precise voltage thresholds for the ON/OFF states of the LDO and ensuring that in the OFF state the LDO output is not affected by fast variations of the supply voltage. First, an Enable circuit with hysteresis and temperature compensated thresholds is described: the accuracy of its threshold voltages - including their low temperature coefficients - are predicted by analytical analysis and validated by measurements performed on a silicon implementation. Second, a simple yet effective comparator is proposed, able to significantly reduce the effect the supply voltage variations have on the output voltage when the regulator is in OFF state. Simulation results show that, when the supply voltage varies from 0 to 28V in 28μs, the overshoot of the output voltage is reduced from 5.5V to under 200mV, that is by a factor of 35.
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