{"title":"氧化物降解对n-MOS反转层普遍迁移行为的影响","authors":"S. K. Manhas, M. M. De Souza, A. Oates, Y. Chen","doi":"10.1109/IPFA.2002.1025668","DOIUrl":null,"url":null,"abstract":"The effect of oxide damage on the electron mobility in n-channel inversion layers is studied. It is observed that as a result of stress, the universal mobility model becomes interface charge dependent. The effect of interface damage, attributed to Coulomb scattering in the region of strong inversion, can be described by a change in universal model parameters with interface charge (N/sub it/). An N/sub it/-dependent model is presented which can be easily assimilated in simulation tools by circuit designers to accurately predict impact of device degradation on performance.","PeriodicalId":328714,"journal":{"name":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","volume":"302 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of oxide degradation on universal mobility behaviour of n-MOS inversion layers\",\"authors\":\"S. K. Manhas, M. M. De Souza, A. Oates, Y. Chen\",\"doi\":\"10.1109/IPFA.2002.1025668\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of oxide damage on the electron mobility in n-channel inversion layers is studied. It is observed that as a result of stress, the universal mobility model becomes interface charge dependent. The effect of interface damage, attributed to Coulomb scattering in the region of strong inversion, can be described by a change in universal model parameters with interface charge (N/sub it/). An N/sub it/-dependent model is presented which can be easily assimilated in simulation tools by circuit designers to accurately predict impact of device degradation on performance.\",\"PeriodicalId\":328714,\"journal\":{\"name\":\"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)\",\"volume\":\"302 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2002.1025668\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2002.1025668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of oxide degradation on universal mobility behaviour of n-MOS inversion layers
The effect of oxide damage on the electron mobility in n-channel inversion layers is studied. It is observed that as a result of stress, the universal mobility model becomes interface charge dependent. The effect of interface damage, attributed to Coulomb scattering in the region of strong inversion, can be described by a change in universal model parameters with interface charge (N/sub it/). An N/sub it/-dependent model is presented which can be easily assimilated in simulation tools by circuit designers to accurately predict impact of device degradation on performance.
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