{"title":"s扩散到p型InP衬底后的位错密度","authors":"I. Weinberg, M. Faur, C. Goradia, R. Clark","doi":"10.1109/ICIPRM.1990.203055","DOIUrl":null,"url":null,"abstract":"The increase in dislocation density at the surface of Zn-doped and Cd-doped p-type InP wafers as a result of heat-treatment and closed-ampoule sulfur diffusion was studied. This research was prompted by the observation of consistently lower efficiencies for solar cells made on Zn-doped as compared to Cd-doped InP substrates of nearly identical dopings and etch pit densities, under identical diffusion conditions. For an 11.83% (AM0, 25 degrees C) solar cell made from diffused Zn-doped substrate, the surface dislocation density was about 2*10/sup 7/ cm/sup -2/, whereas for 14.35% (AM0, 25 degrees C) solar cells made from diffused Cd-doped substrate, the surface dislocation density was about 8*10/sup 5/ cm/sup -2/.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"128 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Dislocation density after S-diffusion into p-type InP substrates\",\"authors\":\"I. Weinberg, M. Faur, C. Goradia, R. Clark\",\"doi\":\"10.1109/ICIPRM.1990.203055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The increase in dislocation density at the surface of Zn-doped and Cd-doped p-type InP wafers as a result of heat-treatment and closed-ampoule sulfur diffusion was studied. This research was prompted by the observation of consistently lower efficiencies for solar cells made on Zn-doped as compared to Cd-doped InP substrates of nearly identical dopings and etch pit densities, under identical diffusion conditions. For an 11.83% (AM0, 25 degrees C) solar cell made from diffused Zn-doped substrate, the surface dislocation density was about 2*10/sup 7/ cm/sup -2/, whereas for 14.35% (AM0, 25 degrees C) solar cells made from diffused Cd-doped substrate, the surface dislocation density was about 8*10/sup 5/ cm/sup -2/.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"128 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dislocation density after S-diffusion into p-type InP substrates
The increase in dislocation density at the surface of Zn-doped and Cd-doped p-type InP wafers as a result of heat-treatment and closed-ampoule sulfur diffusion was studied. This research was prompted by the observation of consistently lower efficiencies for solar cells made on Zn-doped as compared to Cd-doped InP substrates of nearly identical dopings and etch pit densities, under identical diffusion conditions. For an 11.83% (AM0, 25 degrees C) solar cell made from diffused Zn-doped substrate, the surface dislocation density was about 2*10/sup 7/ cm/sup -2/, whereas for 14.35% (AM0, 25 degrees C) solar cells made from diffused Cd-doped substrate, the surface dislocation density was about 8*10/sup 5/ cm/sup -2/.<>
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