Binary Content-Addressable Memory System using Nanoelectromechanical Memory Switch

Content-Addressable Memory (CAM) is a type of memory searches its contents with data and outputs addresses of matching words. Conventional CAM designs used dynamic CMOS architecture for high match speed and high density, but such implementation requires use of system clocks, and thus suffer from timing violations and design limitations such as charge sharing. Thus, we propose static based architecture for CAM, using Nano-Electro Mechanical (NEM) Memory Switch for nonvolatile data storage. We design the proposed CAM architectures on commercial 65 nm process with 1.2 V operating voltage.