倒装无盖封装中硅模断裂强度的基础研究

Ravi Subramaniyan Sathanantham, F. Foo, Z. Oh
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摘要

深亚微米技术的进步使微电子工业有机会在更小的芯片上挤进更多的晶体管。因此,为这些高密度电路散热的热管理解决方案变得越来越重要。使热管理挑战复杂化的是对极薄产品的高需求,这推动了无盖包装解决方案。这些无盖封装暴露在恶劣的环境中,使其在组装,测试,运输和处理过程中容易出现划痕和碎片。因此,迫切需要评估无盖倒装芯片封装中硅芯片的强度,并从根本上了解芯片背面缺陷的影响,以确保倒装芯片的机械可靠性不受影响。本文研究了微观缺陷对硅模具断裂强度的影响。本文使用标准技术来评估倒装芯片模具的强度作为缺陷尺寸的函数,使用标准弯曲试验来确定断裂强度和硅模具中发生断裂所需的最小缺陷尺寸。通过实施断裂分析技术,人们已经努力了解硅中裂纹的起源和扩展,这可以作为模具裂纹物理失效分析的一个重要步骤。
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Fundamental study of fracture strength of silicon dies in flip-chip lidless packages
Advancement in deep-sub-micron technology has given the microelectronic industry the opportunity to squeeze more transistors on a smaller die. As a result, thermal management solutions for these high-density circuits that dissipate a large amount of heat become ever-more essential. Compounding the thermal management challenge is the high demand for razor-thin products that are driving lidless packaging solutions. These lidless packages expose the die back-side to harsh environments, making it prone to scratches and chippage during assembly, testing, transportation, and handling. Hence, there is an urgent need to evaluate the strength of silicon die in lidless flip-chip packages and understand the effect of die back-side flaws at a fundamental level to ensure that the mechanical reliability of the flip-chip die is uncompromised. This work investigates the influence of microscopic flaws on the fracture strength of silicon die. This paper uses standard techniques to evaluate the strength of flip-chip die as a function of flaw size using a standard flexure test to determine fracture strength and the minimum flaw size required for fracture to occur in a silicon die. Efforts have been made to understand the origin and propagation of cracking in silicon by implementing fracture analysis techniques that can be adopted as one important step in physical failure analysis of die cracks.
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