{"title":"存储器的建模和测试方法及其在cam中的应用","authors":"P. R. Sidorowicz, J. Brzozowski","doi":"10.1109/VTEST.1998.670899","DOIUrl":null,"url":null,"abstract":"An approach to modeling and testing memories is presented and illustrated using an n-word by l-bit (n/spl times/l) static content-addressable memory (GAM) array for cell input stuck-at faults. An input stuck at fault model for a CAM is defined, and a test of length 7n+2l+5 with 100% fault coverage with respect to this fault model is constructed. This test also detects all the usual cell stuck-at and transition faults. Finally, some design-for-testability (DFT) modifications facilitating a further reduction of this test's length are proposed.","PeriodicalId":128521,"journal":{"name":"Proceedings. 16th IEEE VLSI Test Symposium (Cat. No.98TB100231)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"An approach to modeling and testing memories and its application to CAMs\",\"authors\":\"P. R. Sidorowicz, J. Brzozowski\",\"doi\":\"10.1109/VTEST.1998.670899\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An approach to modeling and testing memories is presented and illustrated using an n-word by l-bit (n/spl times/l) static content-addressable memory (GAM) array for cell input stuck-at faults. An input stuck at fault model for a CAM is defined, and a test of length 7n+2l+5 with 100% fault coverage with respect to this fault model is constructed. This test also detects all the usual cell stuck-at and transition faults. Finally, some design-for-testability (DFT) modifications facilitating a further reduction of this test's length are proposed.\",\"PeriodicalId\":128521,\"journal\":{\"name\":\"Proceedings. 16th IEEE VLSI Test Symposium (Cat. No.98TB100231)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. 16th IEEE VLSI Test Symposium (Cat. No.98TB100231)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTEST.1998.670899\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. 16th IEEE VLSI Test Symposium (Cat. No.98TB100231)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTEST.1998.670899","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An approach to modeling and testing memories and its application to CAMs
An approach to modeling and testing memories is presented and illustrated using an n-word by l-bit (n/spl times/l) static content-addressable memory (GAM) array for cell input stuck-at faults. An input stuck at fault model for a CAM is defined, and a test of length 7n+2l+5 with 100% fault coverage with respect to this fault model is constructed. This test also detects all the usual cell stuck-at and transition faults. Finally, some design-for-testability (DFT) modifications facilitating a further reduction of this test's length are proposed.
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