5G (28 GHz及以上)的SiGe HBT PA设计-建模和设计挑战

M. Heijden, A. Scholten
{"title":"5G (28 GHz及以上)的SiGe HBT PA设计-建模和设计挑战","authors":"M. Heijden, A. Scholten","doi":"10.1109/BCICTS.2018.8551061","DOIUrl":null,"url":null,"abstract":"This paper highlights some of the modeling and design challenges that we are facing in 5G mm-wave power amplifier (PA) design. Descending from the phased-array system down to the core transistor operation, the critical aspects that influence the performance become apparent. Especially the thermal impact of the total system sets harsh requirements on power dissipation, linearity, ruggedness and reliability of the PA. Therefore, the modeling quality of these characteristics is key in the success of beamformers for 5G mm-wave mobile networks.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"SiGe HBT PA Design for 5G (28 GHz and Beyond) - Modeling and Design Challenges\",\"authors\":\"M. Heijden, A. Scholten\",\"doi\":\"10.1109/BCICTS.2018.8551061\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper highlights some of the modeling and design challenges that we are facing in 5G mm-wave power amplifier (PA) design. Descending from the phased-array system down to the core transistor operation, the critical aspects that influence the performance become apparent. Especially the thermal impact of the total system sets harsh requirements on power dissipation, linearity, ruggedness and reliability of the PA. Therefore, the modeling quality of these characteristics is key in the success of beamformers for 5G mm-wave mobile networks.\",\"PeriodicalId\":272808,\"journal\":{\"name\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS.2018.8551061\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8551061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文重点介绍了我们在5G毫米波功率放大器(PA)设计中面临的一些建模和设计挑战。从相控阵系统下降到核心晶体管操作,影响性能的关键方面变得明显。特别是整个系统的热冲击对放大器的功耗、线性度、坚固性和可靠性提出了苛刻的要求。因此,这些特性的建模质量是5G毫米波移动网络波束形成器成功的关键。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
SiGe HBT PA Design for 5G (28 GHz and Beyond) - Modeling and Design Challenges
This paper highlights some of the modeling and design challenges that we are facing in 5G mm-wave power amplifier (PA) design. Descending from the phased-array system down to the core transistor operation, the critical aspects that influence the performance become apparent. Especially the thermal impact of the total system sets harsh requirements on power dissipation, linearity, ruggedness and reliability of the PA. Therefore, the modeling quality of these characteristics is key in the success of beamformers for 5G mm-wave mobile networks.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Equivalent Circuit Modelling and Parameter Extraction of GaN HEMT Gate Lag Inducing ACLR Degradation of TDD-LTE BTS PA SiGe BiCMOS Current Status and Future Trends in Europe Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS Quantification of Dopant Profiles in SiGe HBT Devices Using SiGe-on-SOI HBTs to Build 300°C Capable Analog Circuits
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1