{"title":"理解载流子输运在mosfet的最终物理缩放极限","authors":"H. Tsuchiya","doi":"10.1109/IMFEDK.2014.6867045","DOIUrl":null,"url":null,"abstract":"We discuss the impact of quantum transport and atomistic effects on nano-MOS transistors using computer simulations. We stress the importance of understanding carrier transport at the atomic level to utilize emerging device technologies.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Understanding carrier transport in the ultimate physical scaling limit of MOSFETs\",\"authors\":\"H. Tsuchiya\",\"doi\":\"10.1109/IMFEDK.2014.6867045\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We discuss the impact of quantum transport and atomistic effects on nano-MOS transistors using computer simulations. We stress the importance of understanding carrier transport at the atomic level to utilize emerging device technologies.\",\"PeriodicalId\":202416,\"journal\":{\"name\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2014.6867045\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867045","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Understanding carrier transport in the ultimate physical scaling limit of MOSFETs
We discuss the impact of quantum transport and atomistic effects on nano-MOS transistors using computer simulations. We stress the importance of understanding carrier transport at the atomic level to utilize emerging device technologies.
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