A normalization procedure of DC-side stray inductance for high-speed switching circuit

Recently, high-speed switching circuits using SiC and GaN power devices have been developed for realizing higher efficiency. Stray inductance caused by the wiring structure between a DC capacitor and power devices is one of the most critical parameters for these high-speed switching circuits. In this paper a DC-side stray inductance design procedure for a high-speed switching circuit is presented based on a normalization procedure. The stray inductance is presented not as the absolute value [H] but as the percent value [%] based on the power rating of the converter circuit. By applying the proposed method, the stray inductance can be designed for a circuit depending on the switching time and the voltage and current ratings. To verify the normalization method, experimental results are shown using an all-SiC module at voltage and current ratings of 500 V and 100 A, respectively.