{"title":"电信应用中基于共振隧道二极管的光电探测器设计规则","authors":"Saif Alomari, J. Figueiredo","doi":"10.1109/ICTP53732.2021.9744181","DOIUrl":null,"url":null,"abstract":"In this paper, we propose physical rules for designing resonant tunneling diode-based photodetectors. These rules are employed to design two devices based on the InGaAs/InP material system, which can theoretically reach speeds of 10 GHz. The calculations are supported by simulations using Silvaco ATLAS software.","PeriodicalId":328336,"journal":{"name":"2021 IEEE International Conference on Telecommunications and Photonics (ICTP)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Resonant Tunneling Diode Based Photodetectors Design Rules for Telecom Applications\",\"authors\":\"Saif Alomari, J. Figueiredo\",\"doi\":\"10.1109/ICTP53732.2021.9744181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose physical rules for designing resonant tunneling diode-based photodetectors. These rules are employed to design two devices based on the InGaAs/InP material system, which can theoretically reach speeds of 10 GHz. The calculations are supported by simulations using Silvaco ATLAS software.\",\"PeriodicalId\":328336,\"journal\":{\"name\":\"2021 IEEE International Conference on Telecommunications and Photonics (ICTP)\",\"volume\":\"79 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Conference on Telecommunications and Photonics (ICTP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTP53732.2021.9744181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Conference on Telecommunications and Photonics (ICTP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTP53732.2021.9744181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resonant Tunneling Diode Based Photodetectors Design Rules for Telecom Applications
In this paper, we propose physical rules for designing resonant tunneling diode-based photodetectors. These rules are employed to design two devices based on the InGaAs/InP material system, which can theoretically reach speeds of 10 GHz. The calculations are supported by simulations using Silvaco ATLAS software.
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