{"title":"多分段互连测试结构的芯片级电迁移测量技术","authors":"N. Zamani, J. Dhiman, M. Buehler","doi":"10.1109/VMIC.1989.78023","DOIUrl":null,"url":null,"abstract":"Electromigration life testing of multisegment test structures involves the measurement and analysis of space- and time-variant stress temperature distributions. A technique using the concept of a thermal coupling matrix was developed which allows an accurate (<or=0.5 degrees C) determination of each metal segment temperature during stress test. In the data analysis, each segment failure time is adjusted to the target stress temperature. This results in more accurate values for the calculated electromigration parameters.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"30 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Chip-level electromigration measurement technique for multi-segmented interconnect test structures\",\"authors\":\"N. Zamani, J. Dhiman, M. Buehler\",\"doi\":\"10.1109/VMIC.1989.78023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electromigration life testing of multisegment test structures involves the measurement and analysis of space- and time-variant stress temperature distributions. A technique using the concept of a thermal coupling matrix was developed which allows an accurate (<or=0.5 degrees C) determination of each metal segment temperature during stress test. In the data analysis, each segment failure time is adjusted to the target stress temperature. This results in more accurate values for the calculated electromigration parameters.<<ETX>>\",\"PeriodicalId\":302853,\"journal\":{\"name\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"volume\":\"30 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VMIC.1989.78023\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Chip-level electromigration measurement technique for multi-segmented interconnect test structures
Electromigration life testing of multisegment test structures involves the measurement and analysis of space- and time-variant stress temperature distributions. A technique using the concept of a thermal coupling matrix was developed which allows an accurate (>
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