{"title":"利用ToF-SIMS研究氧化物表面污染","authors":"D. Lu","doi":"10.1109/IPFA.2003.1222745","DOIUrl":null,"url":null,"abstract":"Amine-induced photoresist poisoning is well known. However, the mechanism for the formation of this amine contamination is still not well understood. In this study, it has been found that wet cleaning of the oxide surface a small amount of hydrocarbons, which are responsible for the gradual accumulation of amine species via airborne molecular contamination.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Study of oxide surface contamination using ToF-SIMS\",\"authors\":\"D. Lu\",\"doi\":\"10.1109/IPFA.2003.1222745\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Amine-induced photoresist poisoning is well known. However, the mechanism for the formation of this amine contamination is still not well understood. In this study, it has been found that wet cleaning of the oxide surface a small amount of hydrocarbons, which are responsible for the gradual accumulation of amine species via airborne molecular contamination.\",\"PeriodicalId\":266326,\"journal\":{\"name\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2003.1222745\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of oxide surface contamination using ToF-SIMS
Amine-induced photoresist poisoning is well known. However, the mechanism for the formation of this amine contamination is still not well understood. In this study, it has been found that wet cleaning of the oxide surface a small amount of hydrocarbons, which are responsible for the gradual accumulation of amine species via airborne molecular contamination.
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