{"title":"一种基于InGaP/GaAs/InGaAs阶跃组成-发射极异质结双极晶体管的新型s形开关","authors":"J. Tsai, S. Chiu, Ying-Cheng Chu, King-Poul Zhu","doi":"10.1109/IWJT.2004.1306800","DOIUrl":null,"url":null,"abstract":"A functional InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor (HBT) is fabricated and demonstrated. Due to the avalanche multiplication and discontinuous confinement effects for electrons at InGaP/GaAs heterojunction and InGaAs quantum well, an interesting triple-route S-shaped negative-differential-resistance switch is observed under inverted operation mode at room temperature. In addition, the excellent transistor performances including a high current gain of 220 and a low offset voltage of 60 mV are achieved under normal operation mode. Consequently, the excellent switching characteristic and transistor action of the studied HBT provides a promise for amplifier and multiple-valued logic circuit applications.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor\",\"authors\":\"J. Tsai, S. Chiu, Ying-Cheng Chu, King-Poul Zhu\",\"doi\":\"10.1109/IWJT.2004.1306800\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A functional InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor (HBT) is fabricated and demonstrated. Due to the avalanche multiplication and discontinuous confinement effects for electrons at InGaP/GaAs heterojunction and InGaAs quantum well, an interesting triple-route S-shaped negative-differential-resistance switch is observed under inverted operation mode at room temperature. In addition, the excellent transistor performances including a high current gain of 220 and a low offset voltage of 60 mV are achieved under normal operation mode. Consequently, the excellent switching characteristic and transistor action of the studied HBT provides a promise for amplifier and multiple-valued logic circuit applications.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306800\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor
A functional InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor (HBT) is fabricated and demonstrated. Due to the avalanche multiplication and discontinuous confinement effects for electrons at InGaP/GaAs heterojunction and InGaAs quantum well, an interesting triple-route S-shaped negative-differential-resistance switch is observed under inverted operation mode at room temperature. In addition, the excellent transistor performances including a high current gain of 220 and a low offset voltage of 60 mV are achieved under normal operation mode. Consequently, the excellent switching characteristic and transistor action of the studied HBT provides a promise for amplifier and multiple-valued logic circuit applications.
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