波长范围为1.3 ~ 2.1 μm的具有自组装岛的发光SiGe异质结构

11th International Conference on Group IV Photonics (GFP) Pub Date : 2014-11-24 DOI:10.1109/GROUP4.2014.6961971

A. Novikov, A. Tonkikh, D. Yurasov, A. Antonov, N. Baydakova, K. Kudryavtsev, M. Shaleev, D. Lobanov, Z. Krasilnik

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摘要

本文研究了生长在Si(001)、SOI和松弛的SiGe/Si(001)缓冲层上的Ge(Si)自组装岛发光结构的形成和发光特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Light-emitting SiGe heterostructures with self-assembled islands for optical interconnection in the wavelength range of 1.3–2.1 μm

The paper is devoted to the study of formation and luminescent properties of light-emitting structures with Ge(Si) self-assembled islands grown on Si(001), SOI and relaxed SiGe/Si(001) buffers.

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11th International Conference on Group IV Photonics (GFP)

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