研究了干等离子体技术制备高性能重分布层的各个步骤

Daisuke Hironiwa, Haw Wen Chen, Y. Morikawa, Takashi Kurimoto, R. Kamimura
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引用次数: 0

摘要

随着高性能器件需求的不断增加,实现高密度封装产品成为一个至关重要的课题。然而,半导体芯片的尺寸很难进一步小型化。在此背景下,半导体封装技术成为提高器件性能的焦点。根据设备的预期用途,封装结构会发生很大的变化。因此,布线层的小型化是提高几乎封装产品性能的一个重要项目。本文介绍了用表面波等离子体(SWP)和电容耦合等离子体(CCP)方法在干灰化设备上对光敏聚酰亚胺(PI)制备重分布层(RDL)的等离子体处理方法。为了制造高性能的RDL,需要比以往更精细地控制铜线、PI和光刻胶(PR)的表面状况。本文报告了制备RDL的各工序的调查结果。
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The investigation of dry plasma technology in each steps for the fabrication of high performance redistribution layer
With the increasing demand for high-performance devices, the achievement of high-density package products become a crucial topic. However, the scale of semiconductor chips is difficult to miniature furthermore. Against this background, the technology of the semiconductor packages is focused to improve device performance. The package structure changes greatly depending on the intended use of the device. Thus, the process of miniaturizing the wiring layer is an important item to improve the performance of almost packaged products. This report describes plasma treatment for the fabrication of redistribution layer (RDL) using photosensitive polyimide (PI) by the dry ashing equipment with the method of surface wave plasma (SWP) and capacitively coupled plasma (CCP). In order to fabricate a high-performance RDL, it is necessary to control the surface situation of copper wiring, PI, and photoresist (PR) more delicately than ever before. In this paper, we report the survey results for each process to fabricate RDL.
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